產(chǎn)品分類
MPCVD長晶爐
所屬分類：
C單晶生長設(shè)備
概要：
本設(shè)備主要是用于制備單晶金剛石。可激發(fā)高穩(wěn)定度的等離子團(tuán)，從而確保單晶生長的持續(xù)性，為合成大尺寸單晶金剛石提供有力保證。
關(guān)鍵詞：
MPCVD長晶爐
MPCVD長晶爐
產(chǎn)品概述/Product Introduction：
本設(shè)備主要是用于制備單晶金剛石。可激發(fā)高穩(wěn)定度的等離子團(tuán)，從而確保單晶生長的持續(xù)性，為合成大尺寸單晶金剛石提供有力保證。
The equipment is mainly used forthe preparation of single crystal diamond.It can excite the plasma cluster with high stability, thus ensuring the continuity of single crystal growth and providing a strong guarantee for the synthesis of large-size single crystal diamond.
產(chǎn)品特點(diǎn)/Product Characteristics：
♦ 制程溫度范圍:300-1500℃ Temperature process range: 300-1500C
♦ 氣路系統(tǒng):6路 Gas path system: 6 channels
♦ 微波功率:6-15Kw連續(xù)可調(diào) Microwave power: 6-15Kw continuously adjustable
♦ 波紋:≤1% Ripple:≤1%
♦ 微波泄露值:＜5Mw/cm2 Microwaveleakagevalue:<5Mw/cm²
♦ 沉積區(qū)域:≥100mm Deposition area:≥100 mm
♦ 極限真空:≤10Pa Limit vacuum:≤10Pa
♦ 壓力范圍:5-300Torr Pressure range: 5-300 Torr
♦ 功率穩(wěn)定性:＜2% Power stability:<2%
♦ 微波頻率:2.45GHz土50MHz Microwave frequency:2.45GHz ± 50MHz
♦ 放電區(qū)域:≥100mm Discharge area:≥100mm
♦ 生長速率:>12um Growth rate:>12um
上一個
無
下一個
更多產(chǎn)品